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We have investigated oxidation resistance of melt grown Mg2Si crystals doped with Sb or Bi impurity by thermal annealing above 600°C, large difference of oxidation speed was observed in the Sb-doped, Bi-doped and non-doped Mg2Si crystals. The sample weight of Bi-doped and non-doped Mg2Si increased about 128% and 104%, respectively, while that of Sb-doped one unchanged after thermal annealing at 650°C for 6h. TG/DTA analysis also revealed the changing of oxidation speed and reaction temperature in the Sb-doped, Bi-doped and non-doped Mg2Si crystals. These results indicate that Sb-dopant improves the oxidation resistance whereas Bi-dopant deteriorates the oxidation resistance of Mg2Si.

Oxidation resistance of impurity doped Mg2Si grown from the melt

Oxidation resistance of impurity doped Mg₂Si grown from the melt