Open AccessOxidation resistance of impurity doped Mg2Si grown from the melt
Author(s) -
Shu Konno,
Tsubasa Otubo,
Kohei Nakano,
Haruhiko Udono
Publication year - 2017
Language(s) - English
Resource type - Conference proceedings
DOI - 10.7567/jjapcp.5.011301
Subject(s) - doping , dopant , impurity , materials science , annealing (glass) , analytical chemistry (journal) , spreading resistance profiling , thermal oxidation , silicon , metallurgy , chemistry , optoelectronics , chromatography , organic chemistry
We have investigated oxidation resistance of melt grown Mg2Si crystals doped with Sb or Bi impurity by thermal annealing above 600°C, large difference of oxidation speed was observed in the Sb-doped, Bi-doped and non-doped Mg2Si crystals. The sample weight of Bi-doped and non-doped Mg2Si increased about 128% and 104%, respectively, while that of Sb-doped one unchanged after thermal annealing at 650°C for 6h. TG/DTA analysis also revealed the changing of oxidation speed and reaction temperature in the Sb-doped, Bi-doped and non-doped Mg2Si crystals. These results indicate that Sb-dopant improves the oxidation resistance whereas Bi-dopant deteriorates the oxidation resistance of Mg2Si.
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