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Thermal evaporation is a simple and high-speed method to grow a BaSi2 thin film, which is an emerging candidate for an absorber-layer material of thin-film solar cells. In this study, we have investigated the preferred orientation of BaSi2 films grown at substrate temperatures of 600–700 ◦C by thermal evaporation using X-ray diffraction. 2θ–ω scans show that peaks derived from (100) orientation grow steadily with increasing substrate temperature. By Xray pole figure analysis, the (100)-oriented crystals are proven to be epitaxially grown on Si(100) with two variants. The reason of epitaxial growth is discussed from the epitaxial temperature.

Preferred orientation of BaSi2 thin films fabricated by thermal evaporation

Preferred orientation of BaSi₂ thin films fabricated by thermal evaporation