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We fabricated Mg2Si pn-juncion photodiodes with a shallow mesa structure and a ring electrode using a conventional photolithography process and investigated their electrical and optical character. Dark current densities of about 0.18 and 9 × 10 A/cm were obtained at room temperature and 100 K under the reverse bias at -3 V. Photoresponse below about 2.1 μm was observed in the shallow mesa-type PDs at room temperature operation. The photosensitivity at 1.31 μm was determined about 22 mA/W and 42 mA/W for the bias voltage at 0 and -0.1 V, respectively.

Fabrication of Mg2Si pn-junction photodiode with shallow mesa-structure and ring electrode

Fabrication of Mg₂Si pn-junction photodiode with shallow mesa-structure and ring electrode