English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We have fabricated Mg2Si pn-junction diodes by short-period (30 sec and 1 min) annealing between 400 °C and 480 °C and evaluated the pn-junction depth by EBIC and VC observations. The pn-junction depth of approximately 6 and 30 μm was formed for the annealing conditions of 400 °C, 30sec and 480 °C, 1min, respectively. By comparing the Ag depth profiles determined by SIMS, we estimated the activation ratio at the pn-junction of approximately 8 and 10 % for annealing at 450 °C and 480 °C, respectively. All diodes showed clear rectifying behavior in J-V characteristic and the spectral photosensitivity below approximately 1.8 μm under zero bias condition.

Observation of pn-junction depth in Mg2Si diodes fabricated by short period thermal annealing

Observation of pn-junction depth in Mg₂Si diodes fabricated by short period thermal annealing