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1Institute of Automation and Control Processes of Far Eastern Branch of RAS, Vladivostok, 690041, Radio, 5, Russia 2Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojova 135, 165 02 Praha 6, Czech Republic 3 Institute of Physics of the ASCR, v. v. i., Cukrovarnicka 10/112, 162 00 Praha 6, Czech Republic 4Czech Technical University in Prague, Faculty of Biomedical Engineering, Sitna 3105, 27201 Kladno, Czech Republic

Formation and properties of p–i–n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications