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Tarek M. Mostafa, Motoki Takahara, Ryuji Baba, Suguru Funasaki, Mahmoud Shaban*, Nathaporn Promros**, Aki Tominaga, Maiko Nishibori, and Tsuyoshi Yoshitake*** 1Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan 2Department of Electrical Engineering, Aswan Faculty of Engineering, Aswan University, Aswan 81542, Egypt 3Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand 4Research Center for Synchrotron Light Applications, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

Epitaxial growth of n-type β-FeSi<sub>2</sub>thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions

Epitaxial growth of n-type β-FeSi2thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions

Epitaxial growth of n-type β-FeSi₂thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions