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By using the electric-field-induced optical second-harmonic generation (EFISHG), we measured the EFISHG–time (EFISHG–t) characteristics to study pre-electrical breakdown of indium–zinc-oxide (IZO)/N,N'-di[(1-naphthyl)-N,N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine (α-NPD)/tris(8-hydroxy-quinolinato)aluminum(III) (Alq3)/Al organic light-emitting diodes (OLEDs). A series of EFISHG pulses were identified as a pre-electrical breakdown phenomenon, before OLEDs were electrically broken. Analyzing the results revealed the additional negative charge accumulation at the α-NPD/Alq3 interface which caused by the generation of EFISHG pulses. We concluded that the EFISHG–t measurement is available as a method for detecting pre-electrical breakdown phenomena of OLEDs.

japanese journal of applied physics

Detection of pre-electrical breakdown of IZO/α-NPD/Alq3/Al light-emitting diodes by electric-field-induced optical second-harmonic generation measurement