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We studied the size distribution and its scaling behavior of self-assembledInAlAs/AlGaAs quantum dots (QDs) grown on GaAs with the Stranski-Krastanov (SK)mode by molecular beam epitaxy (MBE), at both 480{\deg}C and 510{\deg}C, as afunction of InAlAs coverage. A scaling function of the volume was found for thefirst time in ternary alloy QDs. The function was similar to that of InAs/GaAsQDs, which agreed with the scaling function for the two-dimensionalsubmonolayer homoepitaxy simulation with a critical island size of i = 1.However, a character of i = 0 was also found as a tail in the large volume.

Size Distribution and Its Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy