English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.Recent first principles calculations (Sakamoto et al., Ref. 9) suggested thatthe Fermi level is located in two overlapping largely spin-polarized bandsformed in the bandgap of GeFe; spin-down d(e) band and spin-up p-d(t2) band.Thus, it is important to clarify how these bands contribute to spin injectionand detection. In this study, we show the first successful observation of thetunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs)containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed ofepitaxially grown Fe/MgO/Ge0.935Fe0.065. We find that the p-d(t2) band in GeFeis mainly responsible for the tunneling transport. Although the obtained TMRratio is small (0.3%), the TMR ratio is expected to be enhanced by suppressingleak current through amorphous-like crystal domains observed in MgO.

Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe