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By using a C3v symmetric (111) surface as a growth substrate, we are able toachieve high structural symmetry in self-assembled quantum dots, which aresuitable for use as quantum-entangled photon emitters. Here we report on thewavelength controllability of InAs dots on InP(111)A, which we realized bytuning the ternary alloy composition of In(Al,Ga)As barriers that werelattice-matched to InP. We changed the peak emission wavelength systematicallyfrom 1.3 to 1.7 micrometer by barrier band gap tuning. The observed spectralshift agreed with the result of numerical simulations that assumed a measuredshape distribution independent of barrier choice.

Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy