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We evaluate the degree of disorder in electrolyte gating devices through thetransport measurements in graphene. By comparing the mobility in ion- andstandard metal-gated devices, we show that the deposition of the ionic liquidintroduces charged impurities with a density of approximately $6\times 10^{12}$cm$^{-2}$; setting the upper limit of the mobility in graphene to 3000cm$^2$/Vs. At higher temperature, phonons in the ionic liquid further reducethe mobility, making its upper limit 2000 cm$^2$/Vs at room temperature. Sincethe degree of disorder is independent of the base material, these results arevaluable towards understanding disorder effects in general devices usingelectrolyte gating.

Evaluation of Disorder Introduced by Electrolyte Gating through Transport Measurements in Graphene