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We demonstrate injection and transport of perpendicularly spin-polarized electrons in an FePt/MgO/n-GaAs structure. Spin-polarized electrons were injected from a perpendicularly magnetized FePt layer into an n-GaAs layer through a MgO barrier and detected by spatially resolved Kerr rotation microscopy. By measuring the Hanle effect, we reveal that the injected/extracted spin polarizations drastically vary with bias voltages. A spin lifetime of 3.5 ns is obtained that is consistent with the result from pump–probe measurements. This direct observation of perpendicularly polarized spin injection and lateral transport is one step toward realizing future spintronic devices.

Bias dependence of spin injection/transport properties of a perpendicularly magnetized FePt/MgO/GaAs structure