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In this study, we examined the thermoelectric properties of the layeredbismuth-chalcogenide-based (BiCh2-based) compound LaOBiSSe, which is expectedto be a new candidate material for thermoelectric applications. Densifiedsamples were obtained with a hot-press method. The results of the X-raydiffraction measurements showed that the samples obtained were weakly oriented.This affected the resistivity (r) and Seebeck coefficient (S) of the samplesbecause they are dependent upon the orientation of the crystal structure. Thevalues obtained for the power factor (S2/r) when measured perpendicular to thepressing direction (P1) were higher than that when measured parallel to thepressing direction (P2). The thermal conductivity (k) of the samples was alsosensitive to the orientation. The values of k measured along P2 were lower thanthat measured along P1. The highest figure-of-merit (approximately 0.36) wasobtained at around 650 K in both directions, i.e., P1 and P2.

High thermoelectric performance and low thermal conductivity of densified LaOBiSSe