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We report controlled formation of sub-100 nm-thin electron channels inSrTiO$_3$ by doping with oxygen vacancies induced by Ar$^+$-ion irradiation.The conducting channels exhibit a consistent high electron mobility (~15,000cm$^2$V$^{-1}$s$^{-1}$), which enables clear observation of magnetic quantumoscillations, and gate-tunable linear magnetoresistance. Near the onset ofelectrical conduction, the metal-insulator transition is induced by themobility suppression. With the high electron mobility and the ease ofcontrolled channel formation, this ion-irradiation doping method may provide anexcellent basis for developing oxide electronics.

Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal