English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

In this letter, we show that Giant Spin Hall Effect (GSHE) MRAM can enablebetter energy- delay and voltage performance than traditional MTJ based spintorque devices at scaled nanomagnet dimensions (10-30 nm). Firstly, we derivethe effect of dimensional scaling on spin injection efficiency, voltage-delayand energy-delay of spin torque switching using MTJs and GSHE and identify theoptimum electrode geometry for low operating voltage (<0.1 V), high speed (>10GHz) operation. We show that effective spin injection efficiency >100 % can beobtained using optimum spin hall electrode thickness for 30 nm nanomagnetwidths. Finally, we derive the energy-delay trajectory of GSHE and MTJ devicesto calculate the energy-delay product of GSHE and MTJ devices with an energyminimum at the characteristic time of the magnets. Optimized GSHE devices whencombined with PMA can enable MRAM with scaled nanomagnets (30 nm X 60 nm),ultra-low voltage operation (< 0.1 V), fast switching times (10 ps) andswitching energy as low as 100 aJ/bit.

Voltage and Energy-Delay Performance of Giant Spin Hall Effect Switching for Magnetic Memory and Logic