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We show nonlocal spin transport in n-Ge based lateral spin-valve devices withhighly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valvesignals and Hanle-effect curves are demonstrated at low temperatures,indicating generation, manipulation, and detection of pure spin currents inn-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders ofmagnitude larger than that for a device with Fe/MgO tunnel-barrier contactsreported previously. Taking the spin related behavior with temperatureevolution into account, we infer that it is necessary to simultaneouslydemonstrate the high spin generation efficiency and improve the quality of thetransport channel for achieving Ge based spintronic devices.

Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes