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We theoretically investigate the spin injection in different FM/I/n-Si tunnelcontacts by using the lattice NEGF method. We find that the tunnel contactswith low barrier materials such as TiO$_2$ and Ta$_{2}$O$_{5}$, have much lowerresistances than the conventional barrier materials, resulting in a wider andattainable optimum parameters window for improving the spin injectionefficiency and MR ratio of a vertical spin MOSFET. Additionally, we find thespin asymmetry coefficient of TiO$_2$ tunnel contact has a negative value,while that of Ta$_{2}$O$_{5}$ contact can be tuned between positive andnegative values, by changing the parameters.

Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact