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The effects of nitridation on the density of traps at SiO$_2$/SiC interfacesnear the conduction band edge were qualitatively examined by a simple, newlydeveloped characterization method that utilizes Hall effect measurements andsplit capacitance-voltage measurements. The results showed a significantreduction in the density of interface traps near the conduction band edge bynitridation, as well as the high density of interface traps that was noteliminated by nitridation.

Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements