English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report the design of GaAs-based monolithic valley phononic crystals(VPnCs) with multiple complete phononic bandgaps, which support simultaneousvalley-protected edge states with different symmetries in the gigahertz (GHz)range. Rotation of triangular holes in the unit cells breaks the mirrorsymmetry, and this orientation degree of freedom enables the structures toexhibit different valley vortex chiralities. We numerically demonstrate thetransport of multi-band valley-protected edge states with suppressedbackscattering at the sharp corners of the interfaces between different VPnCs.Such monolithic semiconductor structures pave the way for ultra-high frequencytopological nanophononic applications by using the lithographic technique.

Design of GaAs-based valley phononic crystals with multiple complete phononic bandgaps at ultra-high frequency