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Monolayers of $AB$Te$_4$ ($A$/$B$ = Ti, Zr, Hf) were theoretically predictedto be two-dimensional topological insulators, but little has been known aboutthe physical properties of these compounds. Here, we report on the singlecrystal growth, bulk transport properties, and band structure calculations ofthese compounds. The magnetotransport properties indicate that all threecompounds are multi-carrier systems. The experimental results of ZrTiTe$_4$ andHfTiTe$_4$ can be well fitted by the multi-carrier formula assuming two typesof carriers, while three carrier components were necessary for HfZrTe$_4$.Interestingly, one of the carrier mobilities of HfZrTe$_4$ exceeded 1000cm$^2$V$^{-1}$s$^{-1}$, which was nearly one order in magnitude larger than thecarrier mobilities of ZrTiTe$_4$ and HfTiTe$_4$. Our band structurecalculations showed that all three compounds are semimetals consistent with themagnetotransport properties. The band structure around the $\Gamma$-point ofHfZrTe$_4$ exhibits features that are distinct from the other two compounds,which is likely the reason of the different carrier properties.

Single Crystal Growth and Transport Properties of van der Waals Materials $AB$Te$_\mathbf{4}$ ($A/B$ = Ti, Zr, Hf)