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Strain engineering is one of the key technologies for using graphene as anelectronic device: the strain-induced pseudo-gauge field reflects Diracelectrons, thus opening the so-called conduction gap. Since strain accumulatesin constrictions, graphene nanoconstrictions can be a good platform for thistechnology. On the other hand, in the graphene nanoconstrictions, Fabry-Perottype quantum interference dominates the electrical conduction at low biasvoltages. We argue that these two effects have different strain dependence; thepseudo-gauge field contribution is symmetric with respect to positive (tensile)and negative (compressive) strain, whereas the quantum interference isantisymmetric. As a result, a peculiar strain dependence of the conductanceappears even at room temperatures.

Theory of the Strain Engineering of Graphene Nanoconstrictions