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Although SbSe2-based layered compounds have been predicted to behigh-performance thermoelectric materials and topological materials, most ofthese compounds obtained experimentally have been insulators so far. Here, wepresent the effect of Bi substitution on the thermoelectric properties ofSbSe2-based layered compounds NdO0.8F0.2Sb1-xBixSe2 (x = 0-0.4). The roomtemperature electrical resistivity is decreased to 8.0 * 10^-5 ohmm for x =0.4. The electrical power factor is calculated to be 1.4 * 10^-4 W/mK^2 at 660K, which is in reasonable agreement with combined Jonker and Ioffe analysis.The room-temperature lattice thermal conductivity of less than 1 W/mK is almostindependent of x, in contrast to the point-defect scattering model forconventional alloys. The present work provides an avenue for exploringSbSe2-based insulating and BiSe2-based conducting systems.

Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$