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Sulfur-doped SnSe single crystal was successfully synthesized using a meltand slow-cooling method. The chemical composition and valence state of theobtained sample were analyzed by X-ray photoelectron spectroscopy. The pressurerange of a diamond anvil cell with boron-doped diamond electrodes was upgradedto 104 GPa using nano-polycrystalline diamond anvil to investigate a pressureeffect for the sample. Electrical resistivity measurements of sulfur-doped SnSesingle crystal showed the insulator-metal-superconductor transition by applyinghigh pressure up to 75.9 GPa.

Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell