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We investigated Ce-substitution and reduction annealing effects on theelectronic states at copper sites by Cu ${K}$-edge x-ray absorption near-edgestructure measurements in Pr$_{2-x}$Ce$_x$CuO$_{4+\alpha-\delta}$ (PCCO) withvarying $x$ and $\delta$ (the amount of oxygen loss during annealing) values.Absorption near-edge spectra were modified by Ce-substitution and reductionannealing in a similar manner with increasing $x$ and $\delta$. Consideringelectron doping by Ce-substitution, this similarity indicates an increase ofelectron number at the copper sites due to annealing $n_{\rm AN}$. Thus, thetotal number of electrons is determined by the amount of Ce and oxygen ions.Furthermore, quantitative analyses of the spectra clarified that the number ofCu$^+$ sites, corresponding to the induced electron number by Ce-substitution$n_{\rm Ce}$ increases linearly with $x$ in the as-sintered PCCO ($\delta=0$),whereas $n_{\rm AN}$ is not exactly equal to twice of $\delta$, which isexpected from charge neutrality. For each $x$-fixed sample, $n_{\rm AN}$ tendsto exceed 2$\delta$ with increasing $\delta$, suggesting the emergence of twotypes of carrier due to annealing.

Ce-doping and reduction annealing effects on electronic states in Pr$_{2-x}$Ce$_{x}$CuO$_4$ studied by Cu ${K}$-edge X-ray absorption spectroscopy