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Inspired by the recent first-principles calculations showing the highthermoelectric performance of layered pnictogen chalcogenides, weexperimentally characterise the crystal structure and high-temperaturetransport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce).The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group,consisting of alternate stacks of SbSe2 and REO layers. These two compoundswere n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 wereevaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermalconductivity was 1.5 Wm-1K-1 for RE = La and 0.8 Wm-1K-1 for RE = Ce. Theserelatively low thermal conductivities were comparable to those of isostructurallayered bismuth chalcogenides. We substituted O2- with F- ions to introduceelectrons as charged carriers to optimize the thermoelectric performance, butincreasing the electrical conductivity was still challenging.

Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)