English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We have performed electronic structure calculations to explore the band-gapdependence on polytypes for $sp^3$-bonded semiconducting materials, i.e., SiC,AlN, BN, GaN, Si, and diamond. In this comprehensive study, we have found thatband-gap variation depending on polytypes is common in $sp^3$-bondedsemiconductors; SiC, AlN, and BN exhibit smallest band gaps in $3C$ structure,whereas diamond does in $2H$ structure. We have also clarified that themicroscopic mechanism of the band-gap variations is attributed to peculiarelectron states $floating$ in internal channel space at the conduction-bandminimum (CBM), and that internal channel length and the electro-staticpotential in channel affect the energy level of CBM.

Comprehensive study on band-gap variations in $sp^3$-bonded semiconductors: roles of electronic states floating in internal space