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Electrical resistivity measurements have been performed on the iron-basedladder compounds Ba$_{1-x}$Cs$_x$Fe$_2$Se$_3$ ($x$ = 0, 0.25, 0.65, and 1)under high pressure. A cubic anvil press was used up to 8.0 GPa, whereasfurther higher pressure was applied using a diamond anvil cell up to 30.0 GPa.Metallic behavior of the electrical conductivity was confirmed in the $x$ =0.25 and 0.65 samples for pressures greater than 11.3 and 14.4 GPa,respectively, with the low-temperature $\log T$ upturn being consistent withweak localization of 2D electrons due to random potential. At pressures higherthan 23.8 GPa, three-dimensional Fermi-liquid-like behavior was observed in thelatter sample. No metallic conductivity was observed in the parent compoundsBaFe$_2$Se$_3$ ($x $ = 0) up to 30.0 GPa and CsFe$_2$Se$_3$ ($x$ = 1) up to17.0 GPa. The present results indicate that the origins of the insulatingground states in the parent and intermediate compounds are intrinsicallydifferent; the former is a Mott insulator, whereas the latter is an Andersoninsulator owing to the random substitution of Cs for Ba.

Pressure-Induced Metallization in Iron-Based Ladder Compounds Ba$_{1-x}$Cs$_x$Fe$_2$Se$_3$