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The in-plane anisotropy of resistivity has been investigated forBa(Fe$_{1-x}$TM$_{x}$)$_2$As$_2$ (TM-Ba122, TM$=$Cr, Mn, and Co) where thesubstitution sites are the same but the doped carriers are different fordifferent TM elements. The Hall coefficient measurements indicated that holecarriers are effectively doped by Cr substitution but not by Mn substitution.It has been found that the resistivity difference $\Delta\rho=\rho_{\rmb}-\rho_{\rm a}$ in the antiferromagnetic-orthorhombic (AFO) phase of Cr-Ba122is initially positive but it turns to negative with increasing Cr content,whereas the positive $\Delta\rho$ monotonically increases with Mn substitutionin Mn-Ba122. In the paramagnetic-tetragonal phase, $\Delta\rho$ is alwayspositive, but it decreases with substitution in Cr-Ba122, in contrast to theelectron-doped case. These results demonstrate that the resistivity anisotropyexhibits electron-hole asymmetry in both AFO and nematic phases and that itdepends on the Fermi surface topology whether the carrier scattering results ina positive or negative $\Delta\rho$.

journal of the physical society of japan

Importance of Fermi Surface Topology for In-Plane Resistivity Anisotropy  in Hole- and Electron-Doped Ba(Fe$_{1-x}$TM$_{x}$)$_2$As$_2$ (TM=Cr, Mn and  Co)