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Observations of polariton condensation in semiconductor microcavities suggestthat polaritons can be exploited as a novel type of laser with low input-powerrequirements. The low-excitation regime is approximately equivalent to thermalequilibrium, and a higher excitation results in more dominant nonequilibriumfeatures. Although standard photon lasing has been experimentally observed inthe high excitation regime, e-h pair binding can still remain even in thehigh-excitation regime theoretically. Therefore, the photoluminescence with adifferent photon lasing mechanism is predicted to be different from that with astandard photon lasing. In this paper, we report the temperature dependence ofthe change in photoluminescence with the excitation density. The secondthreshold behavior transited to the standard photon lasing is not measured at alow-temperature, high-excitation power regime. Our results suggest that theremay still be an electron--hole pair at this regime to give a different photonlasing mechanism.

Temperature Dependence of Highly Excited Exciton Polaritons in Semiconductor Microcavities