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We study the high harmonic generation (HHG) in Mott insulators using Floquetdynamical mean-field theory (DMFT). We show that the main origin of the HHG inMott insulators is the doublon-holon recombination, and that the character ofthe HHG spectrum differs depending on the field strength. In the weaker-fieldregime, the HHG spectrum shows a single plateau as in the HHG from gases, andits cut-off energy $\epsilon_{\rm cut}$ scales linearly with the field strength$E_0$ as $\epsilon_{\rm cut}=\Delta_{\rm gap} + \alpha E_0$, where $\Delta_{\rmgap}$ is the Mott gap. On the other hand, in the stronger-field regime,multiple plateaus emerge and the $m$-th cut-off scales as $\epsilon_{\rmcut,m}=U + m E_0$. We show that this difference originates from the differentdynamics of the doublons and holons in the weak- and strong-field regimes. Wealso comment on the similarities and differences between HHG from Mottinsulators and from semiconductors. This proceedings paper complements ourrecent work, Phys. Rev. Lett. 121, 057405 (2018), with additional results andanalyses.

Floquet DMFT Analysis of High Harmonic Generation in Mott Insulators