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Owing to their high photon detection efficiency, compactness, and lowoperating voltage, silicon photomultipliers (SiPMs) have found widespreadapplication in many fields, including medical imaging, particle physics, andhigh-energy astrophysics. However, the so-called optical crosstalk (OCT)phenomenon of SiPMs is a major drawback to their adoption. Secondary infraredphotons are emitted inside the silicon substrate spontaneously after theavalanche process caused by the primary incident photons, and they can bedetected by the surrounding photodiodes. As a result large output pulses thatare equivalent to multiple photoelectrons are observed with a certainprobability (OCT rate), even for single-photon events, making the chargeresolution worse and increasing the rate of accidental triggers bysingle-photon events in applications such as atmospheric Cherenkov telescopes.In our previous study, we found that the OCT rates of single-channel SiPMs wasdependent on the thickness of their protection resin window, which may beexplained by photon propagation inside the resin. In the present study, wemeasured the OCT rate of a multichannel SiPM and those of neighboring channelscaused by photon propagation. Both OCT rates were found to be dependent on theprotection-window thickness. We report our OCT measurements of a multichannelSiPM and comparisons with a ray-tracing simulation.

Characterization of SiPM Optical Crosstalk and its Dependence on the Protection-Window Thickness