English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

GaN is known as the third generation of semiconductor and holds promising applications. In this present work, one-dimensional zigzag nanotubes derived from GaN are studied in depth, mainly focusing on the chemical bonding, electronic structure, transport property, and the regulating effect under gate voltage for nanotubes doped with low-concentration non-metallic atoms in main-groups IIIA-VIIA. Some important findings are obtained, for example, the chemical bonds around a heteroatom atom and their average bond length, binding energy, and chemical formation energy are closely related to the atomic number (the atomic radius), and the charge transfer between heteroatom and nanotubes is directly related to their relative electronegativity. More importantly, we find that although the intrinsic nanotube is a semiconductor, when it is doped with non-metallic atoms, the  electronic phases of nanotubes possess an obvious odd-even effect. Namely, after doped by hetero-atoms in main-groups IIIA, VA, VIIA, nanotubes are semiconductors, and , but they becomes metals after doped with hetero-atoms in main-groups IVA and VIA . These phenomenon has a close relation with the lone-paired electronic state. And also, It is found that with atom doping, the carrier mobility (the hole and electron mobility) of semiconducting tubes can be regulated to the difference by one order of magnitude, especially the hole and electron mobility can be obviously enhanced by a higher gate voltage, for example. when the gate voltage is increased to 18 V, the hole mobility rises nearly 20 times compared with the case without gate voltage .

Non-metallic atom doped GaN nanotubes: Electronic structure, transport properties, and gate voltage regulating effects