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The damage mechanism of the total ionizing dose (TID) effect of SiGe heterojunction bipolor transistar (SiGe HBT) is explored by using three-dimensional simulation of semiconductor device (TCAD).In the simulation, the trapped charge defects are introduced into different locations of oxidationin SiGe HBT to simulate the TID effect. Then the degradation characteristics of the forward Gummel characteristic and the reverse Gummel characteristic of the device are analyzed, and the TID damage law of SiGe HBT is obtained. Finally, the simulation results are compared with the  60 Co γ irradiation test results, showing that the trapped charges introduced by TID irradiation in SiGe HBT device mainly affect the Si/SiO 2  interface near the p-n junction, resulting in the change in the depletion region of the p-n junction and the increase of carrier recombination. Eventually, the base current increases and the gain decreases. The trapped charges generated in the EB spacer oxide layer mainly affect the forward Gummel characteristics, and the trapped charges in the LOCOS isolation oxide layer are the main factor causing the reverse Gummel characteristics to degrade. The experimental results on  60 Co γ irradiation under different biases are consistent with those from the total dose effect damage law of SiGe HBT obtained by numerical simulation analysis.

Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor