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Antimony selenide (Sb 2 Se 3 ) is a promising low-cost and environmentally-friendly semiconductor photovoltaic material. The power conversion efficiency of Sb 2 Se 3  solar cells has been improved to   \begin{document}$ \sim $\end{document}10% in the past few years. The carrier recombination transfer dynamics is significant factor that affects the efficiency of Sb 2 Se 3  solar cells. In this work, carrier recombination on the Sb 2 Se 3  surface and carrier transfer dynamics at the CdS/Sb 2 Se 3  heterojunction interface are systematically investigated by surface transient reflectance. According to the evolution of relative reflectance change   \begin{document}${{\Delta }{R}}/{{R}}$\end{document}, the carrier thermalization and band gap renormalization time of Sb 2 Se 3  are determined to be in a range from 0.2 to 0.5 ps, and carrier cooling time is estimated to be about 34 ps. Our results also demonstrate that both free electron and shallow-trapped electron transfer occur at the Sb 2 Se 3 /CdS interface after photo excitation. Our results present a method of explaining the transient reflectance of Sb 2 Se 3  and enhancing the understanding of carrier kinetics at Sb 2 Se 3  surface and Sb 2 Se 3 /CdS interface.

Ultrafast carrier kinetics at surface and interface of Sb<sub>2</sub>Se<sub>3</sub> film by transient reflectance