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The electro-optical properties of devices containing Si-rich silicon nitride (SRN) thin films, deposited by means of low-pressure chemical-vapor deposition (LPCVD), are studied. After optically evidencing the presence of defects in our films, a Poole-Frenkel conduction mechanism has been considered, which is in agreement with electrical experiments. We found that the poly-Si layer strongly modulates the electroluminescence and light absorption of the devices. In addition, they showed photocurrent and photoconductivity under illumination, SRN becoming a promising material for photovoltaic applications.

Investigating the electro-optical properties of non-stoichiometric silicon nitride thin films for photovoltaic applications