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School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju-si 561-756, Korea(2013 6 24 : 2014 7 8 : 2014 918  ):   Si(111)    GaN      Si . Si(111)   (ion-sputter)  Pt    (thermal annealing) Pt       (inductively coupled plasma-reactive ion etching, ICP-RIE)  (pillar)   Si(111)        Si(111)  .  Si(111) ,   Si(111)     Si(111)  (metal organic chemical vapor deposition, MOCVD)  GaN         .   Si(111)   GaN  Si(111)    Si(111)   GaN     .   Si(111)   GaN (002)(102) x- (x-ray diffraction, XRD)  (full width at half maximum, FWHM) 576 arcsec, 828 arcsec    GaN         . Photoluminescence(PL)   Si(111)   GaN  46.5 meV    GaN     .Abstract: An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD),herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrateusing sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched withinductively coupled plasma-reactive ion etching to generate nano-patterned Si (111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layerswere subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions forcomparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surfacemorphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from thephotoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.Keywords: GaN, MOCVD, Pt metal-mask, Si(111) substrate, nano-pattern

Characterization of GaN epitaxial layer grown on nano-patterned Si(111) substrate using Pt metal-mask