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After flash memory card(FMC) was manufactured by B 2 it process, interfacial reaction of silver bump with thermal stress was studied. To investigate bonding reliability of Ag bump, thermal shock and thermal stress tests were conducted and then examined on the crack between Cu land and Ag bump interface. Diffusion reaction of Ag bump/Cu land interface was analyzed using SEM, EDS and FIB. The Ag-Cu alloy layer due to the interfacial reaction was formed at the Ag/Cu interface. As the diffusivity of Ag → Cu is faster than Cu → Ag, a lot of (Cu, Ag) alloy layers were observed at the Cu layer than Ag. These alloy layers contributed to increase the Cu-Ag bonding strength and its reliability.

Interfacial Reaction of Ag Bump/Cu Land Interface for B2it Flash Memory Card Substrate

Interfacial Reaction of Ag Bump/Cu Land Interface for B²it Flash Memory Card Substrate