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Simulation Center, Business Support Div., KICET, Seoul 153-801, Korea(Received September 24, 2010)(Revised October 6, 2010)(Accepted October 8, 2010)Abstract Silicon carbide (SiC) ceramics are widely used in the application of high-temperature structural devices due totheir light weight as well as superior hardness, fracture toughness, and temperature stability. In this paper, we employedclassical molecular dynamics simulations using Tersoff’s potential to investigate the elastic constants of the SiC crystal athigh temperature. The stress-strain characteristics of the SiC crystal were calculated with the LAMMPS software and theelastic constants of the SiC crystal were analyzed. Based on the stress-strain analysis, the SiC crystal has shown the elasticdeformation characteristics at the low temperature region. But the slight plastic deformation behavior was shown as appliedthe high strain over 1,000

Molecular dynamic studies for elastic constant of SiC crystal at high temperature