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In this paper, we designed and fabricated a high-speed semiconductor sensor for use in power control devices and analyzed the characteristics with pulsed radiation tests. At first, radiation sensitive circular Si PIN diodes with various diameters(0.1 mm ∼5.0 mm) were designed and fabricated using Si epitaxial wafer, which has a 42 µm thick intrinsic layer. The reverse leakage current of the diode with a radius of 2 mm at a reverse bias of 30 V was about 20.4 nA. To investigate the characteristic responses of the developed diodes, the pulsed gamma-radiation tests were performed with the intensity of 4.88E8 rad(Si)/sec. From the test results showing that the output currents and the rising speeds have a linear relationship with the area of the sensors, we decided that the optimal condition took place at a 2 mm diameter. Next, for the selected 2 mm diodes, dose rate tests with a range of 2.47E8 rad(Si)/sec to 6.21E8 rad(Si)/sec were performed. From the results, which showed linear characteristics with the radiation intensity, a large amount of photocurrent over 60mA, and a high speed response under 350ns without saturation, we can conclude that the our developed PIN diode can be a good candidate for the sensor of power control devices.

A Parametric Study of Pulsed Gamma-ray Detectors Based on Si Epi-Wafer