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When an integrated circuit device is burned out under high-intense radiation and device-level simulation that usually requires manufacturer’s proprietary information is not available, experimental conformation of a failure mechanism is often the only choice. To distinguish Latchup from other causes experimentally, a new combination of multiple techniques have been developed and demonstrated. Power supply circumvention, hot-spot monitoring using an infrared camera, and supply current monitoring techniques were implemented for the conformation of the Latchup.

An Experimental Analysis for a High Pulse Radiation Induced Latchup Conformation