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— Tantalum oxide (Ta 2 O 5 ) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is 1500 Å , the breakdown voltage is 350volts and dielectric constant is 29. Index Terms — tantalum oxide thin film, Anode oxidation, Electrolyte, Breakdown voltage, Dielectric constant etc. I. INTRODUCTION The tantalum oxide thin film is most extensively used with dielectric material in devices. Because of their high dielectric constant, in recent years they have received increasing attention as a possible alternative dielectric to replace thin SiO

The study on the thickness change of tantalum oxide as voltage drop in electrolyte