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We report an international interlaboratory dual experiment to determine the calibration factor used to calculate the interstitial oxygen content of silicon from room-temperature (300 K) infrared (IR) absorption measurements. We conducted round robins for both the infrared and the absolute measurements on the same or equivalent specimens. The calibration factor for computing the oxygen content of silicon in parts per million atomic (ppma) from a room-temperature measurement of the absorption coefficient at 1107 cm"-' was determined to be 6.28 ± 0.18 ppma/cm~^. The IR round robin showed a reproducibility on the order of 3%.

Database for and statistical analysisof the interlaboratory determination of the conversion coefficient for the measurement of the interstitial oxygen content of silicon by infrared absorption