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The temperature dependence of dc photocurrents produced by x and gamma rays in silicon radiation detectors of the n-p, p-i-n , and surface-barrier type was investigated in a temperature range between 20 and 50 °C. Photodiode photocurrents, assumed as being equal to the generated currents I  g , showed a positive temperature dependence in all detectors investigated. Their temperature coefficient at 25 °C varied between +0.004 per °C and + 0.002 per °C. The temperature dependence of short-circuit currents I  sc measured by a compensation method, was positive and nearly linear for n-p type detectors but nonlinear and negative for p-i-n and surface-barrier type detectors. It is shown, that this different behavior of individual detectors is due to the influence of the strongly temperature-dependent junction current I   j  which under the short-circuit mode is drained off the generated current I   g  . The junction current is a function of the internal series resistance R   s  and the junction resistance R   j  of the irradiated detector ( I   j  = I   sc   R   s  / R   j  ). With increasing resistance ratio R   s  / R   j  , the current ratio I   j  / I   g  increases and the temperature coefficient α sc of the short-circuit current decreases. Temperature coefficients (α sc ) 25 measured in the different detectors at 25 °C and a current density 6 × 10 -7 A/cm 2 decreased with increasing resistance ratio from + 0.004 per °C to - 0.005 per °C. Resistance ratios R   s  / R   j  of the detectors investigated ranged between 0.01 and 0.24 approximately. Thus, (α sc ) 25 measured in an individual detector can be changed by changing its effective series resistance. A decrease of (α sc ) 25 with increasing I  sc was observed in detectors with larger resistance ratios. This was apparently due to the voltage dependence of R   j  at higher junction voltages produced by larger short-circuit currents.

Temperature dependence of photocurrents produced by x and gamma rays in silicon radiation detectors