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U radu su prikazane osnovne karakteristike savremenih materijala: silicijum-germanijuma (SiGe), galijum-arsenida (GaAs) i indijum-fosfida (InP), tehnika i tehnologija koje sa svojim osobinama predstavljaju podršku razvoju suvremenim i budućim radio-frekvencijskim (RF) i fiber-optičkim (FO) aplikacijama koje rade na sve višim frekvencijama i radnim brzinama. Zahtevi tržišta, mogućnosti savremenih materijala i tehnologija diktiraju projektantima usavršavanje pristupa projektovanju sklopova, koje se ogleda kroz više nivoe integracije kola, nova pakovanja i testiranja integrisanih kola (1C). / This paper contains elementary characteristics of materials such as silicon-germanium (SiGe), gallium-arsenide (GaAs) and indium-phosphide (InP), procedures and technologies which support development of modern and future Radio Frequency (RF) and Fiber Optics (FO) applications operating at ever-higher frequencies and speeds. Market requirements, possibilities of modern materials and technologies dictate to designers improvement of the product design the access through higher levels of circuit integration, new packaging and testing of integrated circuits (1C)

Design of advanced radio frequency and fiber optics applications