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A dielectric film with high capacity is expected for the performance improvement and stabilization of electronics. Since the discovery of barium titanate (BaTiO3), a large number of studies on ferroelectric materials have been developed. In this study, we focused electrophoretic deposition (EPD) method as an easy-to-use film-forming process and examined an optimal preparation condition of the BaTiO3 (BT) and Ba0.7Sr0.3TiO3 (BST) dielectric films. In order to improve sintering performance, we used BST binder-coated slurry. The BST binder-coated slurry was dispersed into the acetone-iodine based electrodeposition bath, and thin film was prepared by EPD. The EPD was performed under various conditions; for example, deposition voltage, deposition time, amount of sample, amount of added-I2 and so on. As a result, it was found that the sintering temperature of the deposition films was able to be lowered by using BST binder-coated slurry. After annealing the film deposited for 2 sec at 100 V with 10.0 g·dm−3 BST Al2O3-coated slurry and 0.20 g·dm−3 added-I2, at 800°C for 30 min in a N2 atomsphere, showed 36.0 nF·cm−2 of capacitance density, 45 of dielectric constant, 15.2% of dielectric loss and 1.11 µm of thickness.

Preparation and Estimation of Ba1-xSrxTiO3 Dielectric Films by the Electrophoretic Deposition Method with Binder-Added Slurry