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The relationship between electrical conductivity and dielectric relaxation was investigated for 20 atom % Nd doped CeO2 (Ce0.8Nd0.2O2−δ), which is a typical oxide-ion conductor. Computer simulation clarified that the anomaly large dielectric constant (er′) originated from the superimposition of both Debye-type polarization and interfacial polarization between electrolyte and electrode. Two kinds of the Debye-type relaxation appeared equal and above 773 K, which were ascribed to defect associates, (NdCe′-VO••)• and (NdCe′-VO••-NdCe′)×. The frequency dependence of ac conductivity (σac) was successfully explained by analyzing the dielectric loss factor (er″). The σac values in high temperature and high frequency regions agreed with dc conductivity (σdc). The activation energy for σdc agreed with that for high frequency Debye-type polarization.

Relationship between Oxide-Ion Conductivity and Dielectric Relaxation in 20 atom% Nd-Doped CeO2