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Wide band gap (WBG) power semiconductors have superior properties and accordingly demand for WBG semiconductors has grown recently in various fields, including national defense applications. Since WBG power semiconductors operate in high temperature conditions, interconnects with high temperature reliability are required. Transient liquid phase bonding (TLPB) is emerging as one of the die attach technologies for WBG power semiconductors. However, TLPB has drawbacks, such as long bonding times and void formation. We investigated various methods to address the shortcomings of TLPB, and determined TLPB time can be reduced and void formation can be suppressed through the development of process and interlayer design. This study describes the principles, strengths and weaknesses of each process and interlayer material design.

Strategies to Reduce Transient Liquid Phase Bonding Time for the Die Attach of Power Semiconductors