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For advancement in future spintronics, the diluted magnetic semiconductors (DMSs) might be understood for their origin of ferromagnetic aptness. It not much clear to the ferromagnetism in DMS, that is intrinsic or via dopant clustering formation. For this, we have included a review study for the doping of transition metal and rare earth ions in ZnO. It is realized that the antiferromagnetic ordering is found in doped ZnO to achieve high-TC ferromagnetism. X-ray diffraction and Raman spectra techniques have been used to detect the wurtzite ZnO structure and lattice defects. Since ZnO has different types of morphology formation that is generally dependent on synthesis conditions and dopant level. The band gap energy of ZnO and lattice defect formation are shown by photoluminescence technique. The room temperature ferromagnetism is described with bound magnetic polaron (BMP) model in which oxygen vacancies play a major role. However, the temperature-dependent conditions are responsible for ferromagnetic ordering. The first principle calculation is used for dopant ions in ZnO for their replacement of Zn2+ atoms in the wurtzite structure as well as magnetic contribution.

Diluted Magnetic Semiconductor ZnO: Magnetic Ordering with Transition Metal and Rare Earth Ions