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This chapter presents the results of experimental studies of the formation and investigation of the memristors by probe nanotechnologies. This chapter also perspectives and possibilities of application of local anodic oxidation and scratching probe nanolithography for the manufacture of memristors based on titanium oxide structures, nanocrystalline ZnO thin film, and vertically aligned carbon nanotubes. Memristive properties of vertically aligned carbon nanotubes, titanium oxide, and ZnO nanostructures were investigated by scanning probe microscopy methods. It is shown that nanocrystalline ZnO films manifest a stable memristor effect slightly dependent on its morphology. Titanium oxide nanoscale structures of different thicknesses obtained by local anodic oxidation demonstrate a memristive effect without the need to perform any additional electroforming operations. This experimentally confirmed the memristive switching of a two-electrode structure based on a vertically aligned carbon nanotube. These results can be used in the development of designs and technological processes of resistive random access memory (ReRAM) units based on the memristor devices.

Application of Probe Nanotechnologies for Memristor Structures Formation and Characterization