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The copper oxide (CuO) nanowire arrays were grown by porous alumina membrane (PAM) assistance, subsequently, TiO2 particles were deposited by decomposing titanium isopropoxide (Ti(OiPr)4) using thermal chemical vapor deposition (CVD). The microstructures, compounds, and photoconversion properties of CuO-Al2O3-TiO2 p-i-n junction was characterized by SEM, TEM, EDS, and potentiostat, respectively. The size, shape, and uniform of CuO nanowire arrays were investigated as 90-100 nm, which were depended on the PAM. The nanowires’ surface of TiO2@CuO/Al2O3 was observed roughly by SEM results, and indicated the CuO-Al2O3-TiO2 p-i-n heterojunction structure by EDS analysis. The photo-current and threshold voltage (Vth) of CuO and CuO-Al2O3-TiO2 were measured as 1.08 mA/cm2 (0.65V/SCE) and 1.81 mA/cm2 (0.9V/SCE), respectively. The photoconversion efficiencies were characterized as 1.08% and 1.61%. Highly threshold voltage was observed due to the insulation layer of Al2O3 was posited between CuO and TiO2 interlayer to form the p-i-n junction, which cause the electrons were accumulated on the barrier layer. The rapidly increasing current was eventuated by electron tunneling effect as applying the voltage to breakdown voltage. An energy band diagram is introduced to explain the change in current during water splitting due to electron tunneling through the insulating layer.

Fabrication of Nanowire Arrays CuO-Al2O3-TiO2 as p-Insulator-n Heterojunction for Photochemical Water Splitting